Semiconductor structure and manufacturing method thereof

ABSTRACT

A semiconductor structure includes a transceiver configured to communicate with a device, a molding surrounding the transceiver, a via extending through the molding, an insulating layer disposed over the molding, the via and the transceiver, and a redistribution layer (RDL) disposed over the insulating layer and comprising an antenna and a dielectric layer surrounding the antenna, wherein a portion of the antenna is extended through the insulating layer and the molding to electrically connect with the transceiver.

BACKGROUND

Electronic equipment involving semiconductor devices are essential formany modern applications. The semiconductor device has experienced rapidgrowth. Technological advances in materials and design have producedgenerations of semiconductor devices where each generation has smallerand more complex circuits than the previous generation. In the course ofadvancement and innovation, functional density (i.e., the number ofinterconnected devices per chip area) has generally increased whilegeometric size (i.e., the smallest component that can be created using afabrication process) has decreased. Such advances have increased thecomplexity of processing and manufacturing semiconductor devices.

As technologies evolve, a design of the electronic equipments becomesmore complicated and involves great amount of circuitries to performcomplex functions. Thus, the electronic equipments increasingly requiregreat amount of power to support and perform such increase amount offunctionalities. An increasing number of the electronic equipments suchas mobile phone, camera, notebook, etc. are powered by a rechargeablebattery. The electronic equipments are often charged or recharged byconnecting a terminal on the electronic equipment to a power supplythrough conductive lines or electrical wires. However, such wireconnection approach may be inconvenient to a user, because theelectronic equipment has to physically connect to the power supplyduring charging. Also, the electronic equipment has to be placed near tothe power supply due to limitation on a length of the conductive line.

Therefore, there is a continuous need to modify structure andmanufacturing method of the semiconductor devices in the electronicequipment in order to bring convenient to user and improve theperformance of the electronic equipment while reduce manufacturing costand processing time.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isemphasized that, in accordance with the standard practice in theindustry, various features are not drawn to scale. In fact, thedimensions of the various features may be arbitrarily increased orreduced for clarity of discussion.

FIG. 1 is a schematic top view of a semiconductor structure inaccordance with some embodiments of the present disclosure.

FIG. 2 is a schematic cross-sectional view of a semiconductor structurealong AA′ of FIG. 1 in accordance with some embodiments of the presentdisclosure.

FIG. 3 is a schematic cross-sectional view of a semiconductor structurealong BB′ of FIG. 1 in accordance with some embodiments of the presentdisclosure.

FIG. 4 is a flow diagram of a method of manufacturing a semiconductorstructure in accordance with some embodiments of the present disclosure.

FIG. 4A is a schematic top view of a substrate with a transceiver,charger and resonator in accordance with some embodiments of the presentdisclosure.

FIG. 4B is a schematic cross sectional view of FIG. 4A along AA′ inaccordance with some embodiments of the present disclosure.

FIG. 4C is a schematic cross sectional view of FIG. 4A along BB′ inaccordance with some embodiments of the present disclosure.

FIG. 4D is a schematic top view of a substrate with a molding inaccordance with some embodiments of the present disclosure.

FIG. 4E is a schematic cross sectional view of FIG. 4D along AA′ inaccordance with some embodiments of the present disclosure.

FIG. 4F is a schematic cross sectional view of FIG. 4D along BB′ inaccordance with some embodiments of the present disclosure.

FIG. 4G is a schematic top view of recesses in accordance with someembodiments of the present disclosure.

FIG. 4H is a schematic cross sectional view of FIG. 4G along AA′ inaccordance with some embodiments of the present disclosure.

FIG. 4I is a schematic cross sectional view of FIG. 4G along BB′ inaccordance with some embodiments of the present disclosure.

FIG. 4J is a schematic top view of vias and pillars in accordance withsome embodiments of the present disclosure.

FIG. 4K is a schematic cross sectional view of FIG. 4J along AA′ inaccordance with some embodiments of the present disclosure.

FIG. 4L is a schematic cross sectional view of FIG. 4J along BB′ inaccordance with some embodiments of the present disclosure.

FIG. 4M is a schematic top view of an insulating layer in accordancewith some embodiments of the present disclosure.

FIG. 4N is a schematic cross sectional view of FIG. 4M along AA′ inaccordance with some embodiments of the present disclosure.

FIG. 4O is a schematic cross sectional view of FIG. 4M along BB′ inaccordance with some embodiments of the present disclosure.

FIG. 4P is a schematic top view of a redistribution layer (RDL) inaccordance with some embodiments of the present disclosure.

FIG. 4Q is a schematic cross sectional view of FIG. 4P along AA′ inaccordance with some embodiments of the present disclosure.

FIG. 4R is a schematic cross sectional view of FIG. 4P along BB′ inaccordance with some embodiments of the present disclosure.

DETAILED DESCRIPTION OF THE DISCLOSURE

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Wireless charging is a technology of charging or recharging anelectronic equipment through an air. A power transmission between atransmitter (e.g. in a charger) and a receiver (e.g. in an electronicequipment) over the air is involved. The transmitter and the receiverinclude an antenna respectively, and a power is transmitted from theantenna in the transmitter and received by the antenna in the receiver.The antenna is often an individual component, that a conductive wire isrequired to interconnect the antenna with the transmitter or thereceiver. Such interconnection however would result in a line loss andthus affect a performance of the power transmission. Furthermore, thereis a demand for small size of the antenna, since the transmitter or thereceiver is getting smaller and smaller in geometric size. The antennahas to be miniaturized to meet such demand without compromise aperformance and efficiency of the power transmission.

The present disclosure is directed to a semiconductor structureincluding a redistribution layer (RDL) integrated with an antenna. Theantenna is disposed in the RDL and configured to wirelessly communicatewith a transmitter which transmits a charging power to the semiconductorstructure for charging an electronic equipment. Such integration of theantenna into the RDL would minimize a path loss and thus maximize atransfer coverage, that a signal propagated from the antenna can reach afurther distance. Further, a signal from the transmitter disposed in afurther distance can be received by the antenna. Other embodiments arealso disclosed.

FIG. 1 illustrates a schematic top view of a semiconductor structure 100in accordance with some embodiments of the present disclosure. FIG. 2illustrates a schematic cross sectional view of the semiconductorstructure 100 along AA′ of FIG. 1. FIG. 3 illustrates a schematic crosssectional view of the semiconductor structure 100 along BB′ of FIG. 1.In some embodiments, the semiconductor structure 100 includes atransceiver 101, a molding 102, a via 103, a redistribution layer (RDL)105 and a charger 106.

In some embodiments, the semiconductor structure 100 is electricallyconnected to a power supply. In some embodiments, the semiconductorstructure 100 is configured to receive a charging power inelectromagnetic energy across an air or intervening space. In someembodiments, the semiconductor structure 100 is a receiver. In someembodiments, a charging power is transmitted from a remote transmitterdisposed away from the semiconductor structure 100 and within thepredetermined distance, and the charging power is received by thesemiconductor structure 100 for charging or recharging electronicequipment (e.g. mobile phone, notebook, etc.). In some embodiments, thecharging power can be wirelessly transmitted from the remote transmitterto the semiconductor structure 100. In some embodiments, thesemiconductor structure 100 can convert the charging power from theremote transmitter in electromagnetic energy to electrical energy. Theelectrical energy is utilized for charging or recharging the electronicequipment. In some embodiments, the semiconductor structure 100 convertsthe charging power from the remote transmitter in alternating current(AC) to direct current (DC) for charging or recharging the electronicequipment.

In some embodiments, the transceiver 101 in the semiconductor structure100 is configured to communicate with a device such as the remotetransmitter or the like. In some embodiments, the transceiver 101 isconfigured to transmit a signal to the remote transmitter or receive asignal from the remote transmitter. In some embodiments, the transceiver101 receives a signal in the predetermined electromagnetic energy fromthe remote transmitter when the transmitter is disposed adjacent to thesemiconductor structure 100 or within the predetermined distance. Insome embodiments, the transceiver 101 is a semiconductor chip includinga variety of electrical circuits for performing various functions. Insome embodiments, the transceiver 101 is disposed at a corner of thesemiconductor structure 100.

In some embodiments, the transceiver 101 can emit a signal and theremote transmitter can receive the signal in electromagnetic radiationfrom the transceiver 101, and the remote transmitter can emit a signalin electromagnetic radiation and the transceiver 101 can receive thesignal from the remote transmitter, such that the semiconductorstructure 100 can wirelessly communicate with the remote transmitterthrough the transceiver 101. In some embodiments, the transceiver 101can transmit or receive a signal in a predetermined electromagneticfrequency. In some embodiments, the transceiver 101 can transmit orreceive a signal in the predetermined electromagnetic frequency of about2.4 GHz. In some embodiments, the transceiver 101 can transmit orreceive a signal in an electromagnetic radiation of Bluetooth low energy(BLE). The transceiver 101 can communicate with the remote transmittervia the BLE. In some embodiments, the semiconductor structure 100wirelessly receives a charging power from the remote transmitter forcharging or recharging the electronic equipment after a signal in thepredetermined electromagnetic frequency from the remote transmitter isreceived by the transceiver 101. The charging or recharging of theelectronic equipment is initiated when the transceiver 101 is wirelesslycommunicated with the remote transmitter.

In some embodiments, the semiconductor structure 100 includes themolding 102 which surrounds the transceiver 101. In some embodiments,the molding 102 is disposed over the transceiver 101. In someembodiments, the molding 102 is a single layer film or a compositestack. In some embodiments, the molding 102 is a compound and formedwith composite materials such as rubber, polymer, epoxy, resin,polyimide, polybenzoxazole (PBO), etc. The molding 102 has a highthermal conductivity, a low moisture absorption rate, a high flexuralstrength at board-mounting temperatures, or a combination of these. Insome embodiments, the molding 102 has a thickness of about 100 um toabout 200 um.

In some embodiments, the semiconductor structure 100 includes the via103 extending through the molding 102. In some embodiments, the via 103is surrounded by the molding 102. In some embodiments, the via 103 isdisposed at a central portion of the semiconductor structure 100. Insome embodiments, the via 103 is extended along a length or a width ofthe molding 102. In some embodiments, the via 103 is a throughintegrated circuit via (TIV). In some embodiments, the via 103 is anantenna coil configured to receive the charging power from the remotetransmitter for charging or recharging the electronic equipment. In someembodiments, the via 103 has a working frequency of about 6.78 MHz. Insome embodiments, the via 103 includes conductive material such as gold,silver, copper, nickel, tungsten, aluminum, tin and/or alloys thereof.In some embodiments, the via 103 is in a spiral or loop configuration.In some embodiments, a cross section of the via 103 is in a rectangular,circular or polygonal shape. In some embodiments, the via 103 is in astrip shape.

In some embodiments, the via 103 is configured to surround a dummystructure. In some embodiments, the dummy structure is disposed at acentral portion of the semiconductor structure 100. In some embodiments,the via 103 is configured to inductively coupled with a conductivestructure. In some embodiments, the via 103 is configured toelectrically connected with a resonator 107. In some embodiments, thevia 103 is configured to generate an electric current induced by amagnetic field. In some embodiments, the via 103 has a depth of about100 um to about 200 um. In some embodiments, the depth of the via 103 isabout 150 um.

In some embodiments, a pillar 108 is disposed over the transceiver 101and surrounded by the molding 102. In some embodiments, the pillar 108is extended through the molding 102 towards the transceiver 101. In someembodiments, the pillar 108 is configured to electrically connect thetransceiver 101 with an interconnect structure. In some embodiments, thepillar 108 includes conductive material such as copper, silver,tungsten, gold, platinum, titanium, nickel, aluminum, etc.

In some embodiments, an insulating layer 104 is disposed over themolding 102, the via 103 and the transceiver 101. In some embodiments,the insulating layer 104 includes polymer, polyimide, polybenzoxazole(PBO), etc. In some embodiments, the insulating layer 104 has athickness of about 3 um to about 5 um. In some embodiments, thethickness of the insulating layer 104 is about 4.5 um.

In some embodiments, the semiconductor structure 100 includes the RDL105 disposed over the transceiver 101, the molding 102 and the via 103.In some embodiments, the RDL 105 is disposed over the insulating layer104. In some embodiments, the RDL 105 includes an antenna 105 a, aninterconnect structure 105 b and a dielectric layer 105 c. In someembodiments, the antenna 105 a is disposed over the insulating layer 104and electrically connected with the transceiver 101. In some embodiment,a portion of the antenna 105 a is extended through the insulating layer104 and the molding 102 to electrically connect with the transceiver101. In some embodiments, another portion of the antenna 105 a isextended over the insulating layer 104 along the length or the width ofthe semiconductor structure 100.

In some embodiments, the transceiver 101 can wirelessly transmit asignal to the remote transmitter or receive a signal from the remotetransmitter via the antenna 105 a. The transceiver 101 can communicatewith the remote transmitter via the antenna 105 a. In some embodiments,the antenna 105 a is configured to transmit a signal in electromagneticradiation from the transceiver 101 to surrounding or ambientenvironment. In some embodiments, the antenna 105 a can transmit orreceive a signal in the predetermined electromagnetic frequency of about2.4 GHz. In some embodiments, the antenna 105 a can transmit or receivea signal in an electromagnetic radiation of Bluetooth low energy (BLE).In some embodiments, the semiconductor structure 100 wirelessly receivesa charging power from the remote transmitter for charging or rechargingthe electronic equipment after a signal in the predeterminedelectromagnetic frequency from the remote transmitter is received by theantenna 105 a. The charging or recharging of the electronic equipment isinitiated when the transceiver 101 is wirelessly communicated with theremote transmitter via the antenna 105 a.

In some embodiments, the antenna 105 a can transmit a signal reaching adistance of greater than about 8 meters. In some embodiments, the signaltransmitted from the antenna 105 a can reach the distance of about 10meters. In some embodiments, the antenna 105 a is configured to receivea signal from the remote transmitter disposed in a distance of greaterthan about 8 meters. In some embodiments, the antenna 105 a can receivea signal from the remote transmitter disposed in the distance of about10 meters. In some embodiments, the antenna 105 a has a length of about200 um and a width of about 10 um. In some embodiments, the antenna 105a is in a strip shape. In some embodiments, the antenna 105 a is aBluetooth antenna. In some embodiments, the antenna 105 a includesconductive material such as cooper, titanium, tungsten, etc.

In some embodiments, the antenna 105 a includes an elongated portion 105d extending over the molding 102 and a via portion 105 e extendingthrough the molding 102 to electrically connect with the transceiver101. In some embodiments, the elongated portion 105 d is extended overthe insulating layer 104. In some embodiments, the via portion 105 e isextended between the elongated portion 105 d and the transceiver 101.

In some embodiments, the antenna 105 a has a resonance frequency ofabout 2.4 GHz. In some embodiments, the antenna 105 a can receive asignal in the predetermined electromagnetic frequency corresponding tothe resonance frequency of the antenna 105 a. In some embodiments, theantenna 105 a is configured to inductively coupled with the via 103.

In some embodiments, the interconnect structure 105 b includes anelongated portion 105 f extending over the molding 102 and theinsulating layer 104, and a via portion 105 g extending through theinsulating layer 104 to the via 103. In some embodiments, theinterconnect structure 105 b is electrically connected with the via 103.In some embodiments, the interconnect structure 105 b is electricallyconnected with the transceiver 101 through the pillar 108. In someembodiments, the interconnect structure 105 b includes conductivematerial such as cooper, titanium, tungsten, etc.

In some embodiments, the dielectric layer 105 c is disposed over theinsulating layer 104, the via 103, the molding 102 and the transceiver101. In some embodiments, the dielectric layer 105 c surrounds andcovers the antenna 105 a and the interconnect structure 105 b. In someembodiments, the dielectric layer 105 c includes dielectric materialsuch as oxide, silicon oxide, silicon nitride, etc.

In some embodiments, the semiconductor structure 100 includes a charger106 and a resonator 107. In some embodiments, the resonator 107 iselectrically connected with the via 103 and the charger 106. In someembodiments, the charger 106 is configured to convert the charging powerreceived by the via 103 from AC to DC. In some embodiments, the charger106 is surrounded and covered by the molding 102.

In some embodiments, the resonator 107 configured to oscillate andgenerate the signal. In some embodiments, the resonator 107 isconfigured to generate the signal to the charger 106. In someembodiments, the resonator 107 is surrounded and covered by the molding102. In some embodiments, the resonator 107 is electrically connected tothe via 103. In some embodiments, the resonator 107 generates a signalto the charger 106 when the charging power from the remote transmitterin the predetermined electromagnetic frequency is received by theantenna 105 a. In some embodiments, the resonator 107 has a resonancefrequency substantially different from the resonance frequency of theantenna 105 a.

In the present disclosure, a method of manufacturing a semiconductorstructure is also disclosed. In some embodiments, a semiconductorstructure is formed by a method 400. The method 400 includes a number ofoperations and the description and illustration are not deemed as alimitation as the sequence of the operations.

FIG. 4 is an embodiment of a method 400 of manufacturing a semiconductorstructure 100. The method 400 includes a number of operations (401, 402,403, 404, 405 and 406).

In operation 401, a transceiver 101 is provided or received as shown inFIGS. 4A-4C. FIG. 4B is a cross sectional view along AA′ of FIG. 4A, andFIG. 4C is a cross sectional view along BB′ of FIG. 4A. In someembodiments, the transceiver 101 is provided and disposed over asubstrate 109. In some embodiments, the substrate 109 is configured tosupport the transceiver 101. In some embodiments, the transceiver 101 istemporarily attached to the substrate 109. The substrate 109 would beremoved upon later operation. In some embodiments, the substrate 109 isa wafer or a carrier. In some embodiments, the substrate 109 includessilicon, ceramic, glass, etc.

In some embodiments, the transceiver 101 is a die or chip which includessemiconductive material. In some embodiments, the transceiver 101 isconfigured to transmit or receive a signal in a predeterminedelectromagnetic frequency. In some embodiments, the transceiver 101 cantransmit or receive a signal in an electromagnetic radiation ofBluetooth low energy (BLE). In some embodiments, the transceiver 101 cantransmit or receive a signal in the predetermined electromagneticfrequency of about 2.4 GHz. In some embodiments, the transceiver 101 isdisposed at a corner of the substrate 109. In some embodiments, thetransceiver 101 is configured to provide a wireless communication with aremote transmitter

In some embodiments, a charger 106 and a resonator 107 are also providedor received. In some embodiments, the charger 106 and the resonator 107are disposed over the substrate 109. In some embodiments, the charger106 and the resonator 107 are disposed adjacent to a corner or an edgeof the substrate 109. In some embodiments, the charger 106 and theresonator 107 are temporarily attached to the substrate 109, that thesubstrate 109 would be removed upon later operation. In someembodiments, the resonator 107 is electrically connected with thecharger 106. In some embodiments, the charger 106 is configured toconvert a charging power from the remote transmitter in AC to DC. Insome embodiments, the resonator 107 configured to oscillate and generatethe signal. In some embodiments, the resonator 107 is configured togenerate the signal to the charger 106.

In operation 402, a molding 102 is formed as shown in FIGS. 4D-4F. FIG.4E is a cross sectional view along AA′ of FIG. 4D, and FIG. 4F is across sectional view along BB′ of FIG. 4D. In some embodiments, themolding 102 is disposed over the substrate 109. In some embodiments, themolding 102 surrounds and covers the transceiver 101, the charger 106and the resonator 107. In some embodiments, the molding 102 is acompound and formed with composite materials such as rubber, polymer,epoxy, resin, polyimide, polybenzoxazole (PBO), etc. In someembodiments, the molding 102 is formed by any suitable operation such ascompression molding, etc.

In operation 403, several recesses (103 a or 108 a) are formed as shownin FIGS. 4G-4I. FIG. 4H is a cross sectional view along AA′ of FIG. 4G,and FIG. 4I is a cross sectional view along BB′ of FIG. 4G. In someembodiments, the recesses (103 a or 108 a) are extended over thesubstrate 109. In some embodiments, each of the recesses 103 a isextended through the molding 102. In some embodiments, each of therecesses 108 a is extended from the molding 102 towards the transceiver101 or the charger 106. The recesses 108 a are disposed over thetransceiver 101 or the charger 106. In some embodiments, the recesses(103 a or 108 a) are formed by any suitable operations such asphotolithography, etching, etc.

In operation 404, a conductive material is disposed into the recesses(103 a or 108 a) as shown in FIGS. 4J-4L. FIG. 4K is a cross sectionalview along AA′ of FIG. 4J, and FIG. 4L is a cross sectional view alongBB′ of FIG. 4J. In some embodiments, the conductive material is filledwith the recesses (103 a or 108 a). In some embodiments, the conductivematerial filling the recesses 103 a is same or different from theconductive material filling the recesses 108 a. In some embodiments, theconductive material includes gold, silver, copper, nickel, tungsten,aluminum, tin and/or alloys thereof. In some embodiments, the conductivematerial is disposed by any suitable operation such as sputtering,electroplating, deposition, etc.

In some embodiments, several vias 103 are formed after filing theconductive material into the recesses 103 a. In some embodiments,several pillars 108 are formed after filing the conductive material intothe recesses 108 a. In some embodiments, the vias 103 and the pillars108 are surrounded by the molding 102. In some embodiments, the via 103is extended through the molding 102. In some embodiments, the pillar 108is extended from the molding 102 towards the transceiver 101 or thecharger 106. In some embodiments, the substrate 109 is removed afterforming the vias 103 or the pillars 108.

In operation 405, an insulating layer 104 is disposed and patterned asshown in FIGS. 4M-4O. FIG. 4N is a cross sectional view along AA′ ofFIG. 4M, and FIG. 4O is a cross sectional view along BB′ of FIG. 4M. Insome embodiments, the insulating layer 104 is disposed over the molding102, the vias 103, the pillars 108, the transceiver 101, the charger 106and the resonator 107. In some embodiments, the insulating layer 104includes polymer, polyimide, polybenzoxazole (PBO), etc. In someembodiments, the insulating layer 104 is disposed by any suitableoperation such as chemical vapor deposition (CVD), etc.

In some embodiments, the insulating layer 104 is patterned by formingseveral passages 104 a extending though the insulating layer 104. Insome embodiments, the passage 104 a exposes a portion of the via 103 orthe pillar 108. In some embodiments, the passage 104 a is formed byremoving a portion of the insulating layer 104 over the via 103 or thepillar 108. In some embodiments, the portion of the insulating layer 104is removed by any suitable operation such as photolithography, etching,etc.

In operation 406, a redistribution layer (RDL) 105 is formed as shown inFIGS. 4P-4R. FIG. 4Q is a cross sectional view along AA′ of FIG. 4P, andFIG. 4R is a cross sectional view along BB′ of FIG. 4P. In someembodiments, a semiconductor structure 100 as shown in FIGS. 4P-4R isformed which has similar configuration as the semiconductor structure100 described above or illustrated in FIGS. 1-3. In some embodiments,the semiconductor structure 100 is a receiver for receiving the chargingpower from the remote transmitter disposed within a predetermineddistance and charging or recharging an electronic equipment.

In some embodiments, the RDL 105 is formed over the insulating layer104. In some embodiments, the RDL 105 includes an antenna 105 a disposedover the insulating layer 104 and a dielectric layer 105 c covering theantenna 105 a. In some embodiments, the antenna 105 a is disposed overthe insulating layer 104 and electrically connected with the transceiver101 through the passage 104 a. In some embodiments, the antenna 105 a isdisposed by any suitable operations such as electroplating, etc. In someembodiments, a portion of the antenna 105 a is extended through theinsulating layer 104 and the molding 102 to electrically connect withthe transceiver 101. In some embodiments, the antenna 105 a includesconductive material such as cooper, titanium, tungsten, etc. In someembodiments, the antenna 105 a is in a strip shape. In some embodiments,the antenna 105 a is a Bluetooth antenna.

In some embodiments, the antenna 105 a includes an elongated portion 105d extending over the insulating layer 104 and a via portion 105 eextending through the insulating layer 104 along the passage 104 a toelectrically connect with the transceiver 101. In some embodiments, thevia portion 105 e is extended between the elongated portion 105 d andthe transceiver 101. In some embodiments, the antenna 105 a iselectrically connected with the transceiver 101 by the pillar 108. Thepillar 108 is extended from the insulating layer 104 to the transceiver101.

In some embodiments, the antenna 105 a can wirelessly transmit a signalto the remote transmitter or receive a signal from the remotetransmitter In some embodiments, the antenna 105 a can transmit a signalin a predetermined electromagnetic frequency such as Bluetooth lowenergy (BLE), about 2.4 GHz, etc. In some embodiments, the antenna 105 acan transmit a signal reaching a distance of greater than about 8meters. In some embodiments, the antenna 105 a is configured to receivea signal from the remote transmitter disposed in a distance of greaterthan about 8 meters.

In some embodiments, the RDL 105 includes an interconnect structure 105b disposed over the insulating layer 104. In some embodiments, theinterconnect structure 105 b includes an elongated portion 105 fextending over the insulating layer 104, and a via portion 105 gextending through the insulating layer 104 to the via 103 or the pillar108. In some embodiments, the interconnect structure 105 b iselectrically connected with the via 103 or the pillar 108. In someembodiments, the interconnect structure 105 b is electrically connectedwith the transceiver 101 or the charger 106 through the pillar 108. Insome embodiments, the interconnect structure 105 b includes conductivematerial such as cooper, titanium, tungsten, etc. In some embodiments,the interconnect structure 105 b is formed by any suitable operationssuch as electroplating, etc.

In some embodiments, the dielectric layer 105 c is disposed over theinsulating layer 104 and covers the antenna 105 a and the interconnectstructure 105 b. In some embodiments, the dielectric layer 105 cincludes dielectric material such as oxide, silicon oxide, siliconnitride, etc. In some embodiments, the dielectric layer 105 c isdisposed by any suitable operations such as CVD, etc.

In the present disclosure, an improved semiconductor structure isdisclosed. The semiconductor structure includes an antenna disposedtherein. The antenna is disposed in the RDL and covered by a dielectriclayer. The integration of the antenna into the RDL would minimize a pathloss. As a result, a charging power transmitted from the antenna cancover a further distance. Therefore, a performance of wireless chargingor recharging an electronic equipment by the semiconductor structure isimproved.

In some embodiments, a semiconductor structure includes a transceiverconfigured to communicate with a device, a molding surrounding thetransceiver, a via extending through the molding, an insulating layerdisposed over the molding, the via and the transceiver, and aredistribution layer (RDL) disposed over the insulating layer andcomprising an antenna and a dielectric layer surrounding the antenna,wherein a portion of the antenna is extended through the insulatinglayer and the molding to electrically connect with the transceiver.

In some embodiments, the via is configured to inductively coupled withthe antenna. In some embodiments, the via is in spiral, loop,rectangular, circular or polygonal configuration. In some embodiments,the via has a depth of about 100 um to about 200 um. In someembodiments, the antenna has a resonance frequency of about 2.4 GHz. Insome embodiments, the antenna is configured to transmit or receive asignal in a Bluetooth low energy (BLE) or in a predeterminedelectromagnetic frequency of about 2.4 GHz. In some embodiments, theantenna has a length of about 200 um and a width of about 10 um. In someembodiments, the insulating layer has a thickness of about 3 um to about5 um. In some embodiments, the antenna is configured to transmit asignal reaching a distance of greater than about 8 meters. In someembodiments, the semiconductor structure further includes a chargersurrounded by the molding and configured to convert a charging powerfrom AC to DC. In some embodiments, the semiconductor structure furtherincludes a resonator configured to generate a signal to the charger.

In some embodiments, a semiconductor structure includes a chargerconfigured to convert a charging power from AC to DC, a transceiverconfigured to transmit or receive a signal in a predeterminedelectromagnetic frequency, a molding surrounding the transceiver and thecharger, a plurality of vias extending through the molding, an antennaconfigured to transmit or receive the signal to/from an ambientenvironment, a dielectric layer covering the antenna, wherein theantenna comprises an elongated portion extending over the molding and avia portion extending through the molding to electrically connect withthe transceiver.

In some embodiments, the antenna is configured to receive a signal inthe predetermined electromagnetic frequency from the remote transmitter,and the plurality of vias is configured to receive the charging powerfrom the remote transmitter. In some embodiments, each of the pluralityof vias is a through integrated circuit via (TIV) extending through themolding and inductively coupled with the antenna. In some embodiments,the antenna has a resonance frequency of about 2.4 GHz. In someembodiments, the antenna is a Bluetooth antenna. In some embodiments,the molding has a thickness of about 100 um to about 200 um.

In some embodiments, a method of manufacturing a semiconductor structureincludes providing a transceiver, forming a molding to surround thetransceiver, forming a plurality of recesses extending through themolding, disposing a conductive material into the plurality of recessesto form a plurality of vias, disposing and patterning an insulatinglayer over the molding, the plurality of vias and the transceiver, andforming a redistribution layer (RDL) over the insulating layer, whereinthe RDL comprises an antenna disposed over the insulating layer and adielectric layer covering the antenna, and a portion of the antenna isextended through the insulating layer and the molding to electricallyconnect with the transceiver.

In some embodiments, the method further includes forming a pillarextending from the insulating layer to the transceiver, and the antennais electrically connected with the transceiver by the pillar. In someembodiments, the antenna is disposed by electroplating operations.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A semiconductor structure, comprising: atransceiver configured to communicate with a device; a moldingsurrounding the transceiver; a via extending through the molding; aninsulating layer disposed over the molding, the via and the transceiver;and a redistribution layer (RDL) disposed over the insulating layer andcomprising an antenna and a dielectric layer surrounding the antenna,wherein a portion of the antenna is extended through the insulatinglayer and the molding and is electrically connected with thetransceiver.
 2. The semiconductor structure of claim 1, wherein the viais configured to inductively coupled with the antenna.
 3. Thesemiconductor structure of claim 1, wherein the via is in spiral, loop,rectangular, circular or polygonal configuration.
 4. The semiconductorstructure of claim 1, wherein the via has a depth of about 100 um toabout 200 um.
 5. The semiconductor structure of claim 1, wherein theantenna has a resonance frequency of about 2.4 GHz.
 6. The semiconductorstructure of claim 1, wherein the antenna is configured to transmit orreceive a signal in a Bluetooth low energy (BLE) or in a predeterminedelectromagnetic frequency of about 2.4 GHz.
 7. The semiconductorstructure of claim 1, wherein the antenna has a length of about 200 umand a width of about 10 um.
 8. The semiconductor structure of claim 1,wherein the insulating layer has a thickness of about 3 um to about 5um.
 9. The semiconductor structure of claim 1, wherein the antenna isconfigured to transmit a signal reaching a distance of greater thanabout 8 meters.
 10. The semiconductor structure of claim 1, furthercomprising a charger surrounded by the molding and configured to converta charging power from AC to DC.
 11. The semiconductor structure of claim1, further comprising a resonator configured to generate a signal to thecharger.
 12. The semiconductor structure of claim 1, wherein the antennacomprise a first elongated portion extending over the insulating layerand a first via portion extending through the insulating layer.
 13. Thesemiconductor structure of claim 12, wherein the RDL further comprisesat least one interconnect structure disposed in the dielectric layer.14. The semiconductor structure of claim 13, wherein the interconnectstructure comprises a second elongated portion extending over theinsulating layer and a second via portion extending through theinsulating layer.